Nitride Silicon Wafers

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		Silicon Nitride Wafers Ask for the Nitride wafers that we have in stock. Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation. Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

		Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride’s low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2” - 12” all specs and quanities. Fill out the form for an immediate quote.

	Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. Wafers Sizes up to 300mm Capable of handling custom substrate shapes, sizes and materials Thickness up to 2�m Tolerance: +/- 7% or better Film Stress: 600MPa Tensile Refractive Index: 2.00 Temperature: 350C Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. Wafers Sizes up to 300mm Capable of handling custom substrate shapes, sizes and materials Thickness up to 2�m Tolerance: +/- 7% or better Film Stress: Variable Refractive Index: 1.5-1.9 (Per customer request) Temperature: 350C Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. Wafers Sizes up to 300mm Capable of handling custom substrate shapes, sizes and materials Thickness up to 2�m Tolerance: +/- 7% or better Film Stress: <250MPa Refractive Index: 2.00 Temperature: 350C Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films. Wafers Sizes up to 300mm Capable of handling custom substrate shapes, sizes and materials Thickness up to 2�m Tolerance: +/- 7% or better Film Stress: 400MPa Compressive Refractive Index: 1.46 Temperature: 350C PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films Wafers Sizes up to 300mm Capable of handling custom substrate shapes, sizes and materials Thickness up to 2um Tolerance: +/- 7% or better Film Stress: <100MPa Refractive Index: 2.73 Temperature: 350C


	New Services click link to learn more or just fill out form! PECVD Nitride PECVD Oxide PECVD OxyNitride PECVD Low Stress Nitride PECVD Silicon Carbide PECVD Carbon Doped Oxide

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